Thin Film Planar Filters
High‑precision thin‑film processing technology
High performance, low temperature drift, high power handling
Ceramic substrate, coplanar waveguide 50Ω output
Gold wire bonding, suitable for multi‑chip integrated modules
Technical Specifications (TA = 25°C)
Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
Center Frequency | – | 2.5 | – | GHz |
Operating Frequency | 2.2 | – | 2.8 | GHz |
Center Loss | – | 2.0 | 2.5 | dB |
In‑Band Ripple | – | 0.8 | 1.0 | dB |
Return Loss | 12 | 15 | – | dB |
Out‑of‑Band Rejection @ DC – 1.3 GHz | 45 | 50 | – | dBc |
Out‑of‑Band Rejection @ 4.1 – 9.0 GHz | 45 | 50 | – | dBc |
Environmental Requirements
Parameter | Value |
|---|---|
Maximum Input Power | 30 dBm |
Operating Temperature | -55 °C ~ +85 °C |
Storage Temperature | -55 °C ~ +125 °C |
Recommended Assembly Drawing
(Drawing omitted)
Important Notes
The chip should be used in a divided cavity: 0.1 mm from the side wall, 2.75 mm from the surface to the lid. Ports are interchangeable.
Low‑stress conductive adhesive (e.g., ME8456) is recommended for chip attachment.
The chip should be mounted on a carrier with a thermal expansion coefficient similar to ceramic (6.7 ppm/°C), such as Kovar (recommended) or MoCu. Carrier thickness ≥ 0.2 mm.
When bonding the chip to a PCB microstrip line, it is recommended to use a T‑junction structure for matching at the bonding point. T‑junction dimensions: L [not specified], H [not specified].
Mechanical Dimensions
Parameter | L | W | H | Unit |
|---|---|---|---|---|
Value | 12.0 | 5.5 | 0.254 | mm |
Outline Drawing
(Drawing omitted)
Typical Performance Curves (TA = 25°C)
(Curve omitted)
SPRS TECHNOLOGIES – Thin Film Planar Filters
